A Study of the Effect of Deuterium on Stress-Induced Leakage Current

The effect of deuterium incorporation into SiO 2 on the stress-induced leakage current (SILC) of the gate oxide was investigated using deuterium pyrogenic oxidation and deuterium annealing. As a result, we found that the SILC is reduced by deuterium pyrogenic oxidation under Fowler-Nordheim (F-N) electron injection from the substrate, and that the SILC is not improved by deuterium annealing, although a large amount of deuterium is contained in the SiO 2 film.