Vanishing of Resistance and Diamagnetism Observed in a Very Thin Al Film at Room Temperature
A very thin Al film (thickness: 160–430 Å) was evaporated on a silicon wafer substrate with a SiO 2 film and an arachidic acid Langmuir-Blodgett film. Vanishing of resistance and a repulsive force indicating diamagnetism were observed in the very thin Al film in a magnetic field at room temperature....
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2000-05, Vol.39 (5A), p.L426 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A very thin Al film (thickness: 160–430 Å) was evaporated on
a silicon wafer substrate with a SiO
2
film and an arachidic
acid Langmuir-Blodgett film. Vanishing of resistance and a
repulsive force indicating diamagnetism were observed in the
very thin Al film in a magnetic field at room temperature.
This repulsive force was measured by an apparatus which can
measure small displacements such as 10
-2
µm with a laser beam. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.39.L426 |