In-situ Annealing of Thin SrO Films Grown on Si(001)-2×1 by Molecular Beam Epitaxy

Thin strontium oxide films were grown at 350°C in an oxygen atmosphere of 5 ×10 -8 Torr by Sr-deposition using molecular beam epitaxy (MBE). The evolution of 300-Å-thick SrO films on a Si(001)-2 ×1 substrate is studied by reflection high-energy electron diffraction (RHEED) as a function of annealing...

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Veröffentlicht in:Japanese Journal of Applied Physics 2000, Vol.39 (11R), p.6432
Hauptverfasser: Tambo, Toyokazu, Shimizu, Atsushi, Matsuda, Akiyoshi, Tatsuyama, Chiei
Format: Artikel
Sprache:eng
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Zusammenfassung:Thin strontium oxide films were grown at 350°C in an oxygen atmosphere of 5 ×10 -8 Torr by Sr-deposition using molecular beam epitaxy (MBE). The evolution of 300-Å-thick SrO films on a Si(001)-2 ×1 substrate is studied by reflection high-energy electron diffraction (RHEED) as a function of annealing temperature in an oxygen atmosphere of around 1 ×10 -6 Torr. The RHEED patterns of the SrO crystalline films show streaks with spots up to an annealing temperature of 625°C, and then Debye-Scherrer rings appear with broad spots at 650°C. Above this temperature, the patterns consist only of the rings. From the results, we find that the growth temperature for any epitaxial film on Si with a MBE-grown SrO buffer layer is restricted to be under 625°C.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.6432