Amorphous Refractory Compound Film Material for X-Ray Mask Absorbers
We proposed that the stress of the side walls of an absorber pattern causes the pattern distortion of an X-ray mask. The surfaces of the pattern side walls have a high compressive stress layer because they are easily oxidized in air after absorber pattern etching. This stress becomes a serious probl...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2000-09, Vol.39 (9R), p.5329 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We proposed that the stress of the side walls of an absorber pattern causes the pattern distortion of an X-ray mask. The surfaces of the pattern side walls have a high compressive stress layer because they are easily oxidized in air after absorber pattern etching. This stress becomes a serious problem in proportion to the high degree of pattern integration. To lower the surface oxide layer stress of the film, we developed a TaGe nitride (TaGeN) absorber. The oxide layer stress of TaGeN films becomes lower with increasing the N
2
content in the sputtering gas, and the stress value of Ta
0.35
Ge
0.20
N
0.45
can be decreased to 1/17 that of TaGe. We fabricated a TaGeN X-ray mask and practically demonstrated that the TaGeN absorber was effective for high image placement accuracy to an X-ray mask having high dense patterns with a 0.1 µm pattern size. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.5329 |