Structures and Electrical Properties of Fullerene Thin Films on Si(111)-7×7 Surface Investigated by Noncontact Atomic Force Microscopy

We have studied the fullerene (C 60 ) multilayer thin film deposited on the Si(111)-7×7 reconstructed surface by noncontact atomic force microscopy (NC-AFM) under an ultrahigh-vacuum (UHV) condition. The double domain structure on a terrace of the crystalline island was successfully imaged. We have...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2000, Vol.39 (6S), p.3827
Hauptverfasser: Kei Kobayashi, Kei Kobayashi, Hirofumi Yamada, Hirofumi Yamada, Toshihisa Horiuchi, Toshihisa Horiuchi, Kazumi Matsushige, Kazumi Matsushige
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have studied the fullerene (C 60 ) multilayer thin film deposited on the Si(111)-7×7 reconstructed surface by noncontact atomic force microscopy (NC-AFM) under an ultrahigh-vacuum (UHV) condition. The double domain structure on a terrace of the crystalline island was successfully imaged. We have also simultaneously measured the contact potential difference (CPD) by the Kelvin probe method. Small CPD variations, which are not due to coupling with the topographic image, were measured at a molecular scale.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.3827