Disappearance of Ohmic Loss Corresponding to Disappearance of Resistance in Very Thin Al Film
A very thin Al film of 700 Å or 430 Å thickness was evaporated on an arachidic acid Langumuir-Blodgett film which was deposited on a SiO 2 film present on a silicon wafer substrate. No temperature rise of the very thin Al film was observed in the current range for which the resistance of the very th...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2000-05, Vol.39 (5R), p.2750 |
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| container_issue | 5R |
| container_start_page | 2750 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 39 |
| creator | Hino, Taro |
| description | A very thin Al film of 700 Å or 430 Å thickness was
evaporated on an arachidic acid Langumuir-Blodgett film which was
deposited on a SiO
2
film present on a silicon wafer substrate.
No temperature rise of the very thin Al film was observed
in the current range for which the resistance of the
very thin Al film disappeared. |
| doi_str_mv | 10.1143/JJAP.39.2750 |
| format | Article |
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evaporated on an arachidic acid Langumuir-Blodgett film which was
deposited on a SiO
2
film present on a silicon wafer substrate.
No temperature rise of the very thin Al film was observed
in the current range for which the resistance of the
very thin Al film disappeared.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.39.2750</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2000-05, Vol.39 (5R), p.2750</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Hino, Taro</creatorcontrib><title>Disappearance of Ohmic Loss Corresponding to Disappearance of Resistance in Very Thin Al Film</title><title>Japanese Journal of Applied Physics</title><description>A very thin Al film of 700 Å or 430 Å thickness was
evaporated on an arachidic acid Langumuir-Blodgett film which was
deposited on a SiO
2
film present on a silicon wafer substrate.
No temperature rise of the very thin Al film was observed
in the current range for which the resistance of the
very thin Al film disappeared.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNplkE1LxDAYhIMoWFdv_oD8AFvft0k_cizVXV0KK7J6k5JtEjfSL5Je9t_bqjdPMwPDMDyE3CJEiJzdb7fFS8REFGcJnJEAGc9CDmlyTgKAGEMu4viSXHn_Ncc04RiQjwfr5Thq6WTfaDoYujt2tqHV4D0tB-e0H4de2f6TTgP9V37V3vrpJ9mevmt3ovvj7IqWrm3bXZMLI1uvb_50Rd7Wj_vyKax2m-eyqMKGIZvClEkRqyzPGjQMDciD0Uxqkc7nGZjcKDAaIJd5c0hTlICIKhcKE-BCGcVW5O53t3Hzb6dNPTrbSXeqEeoFTb2gqZmoFzTsG02iVvU</recordid><startdate>20000501</startdate><enddate>20000501</enddate><creator>Hino, Taro</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000501</creationdate><title>Disappearance of Ohmic Loss Corresponding to Disappearance of Resistance in Very Thin Al Film</title><author>Hino, Taro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-63a92d787c1f31f0abfe3ae9640630f8fd0fe008a8cb661a0111d89d15049dfd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hino, Taro</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hino, Taro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Disappearance of Ohmic Loss Corresponding to Disappearance of Resistance in Very Thin Al Film</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2000-05-01</date><risdate>2000</risdate><volume>39</volume><issue>5R</issue><spage>2750</spage><pages>2750-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>A very thin Al film of 700 Å or 430 Å thickness was
evaporated on an arachidic acid Langumuir-Blodgett film which was
deposited on a SiO
2
film present on a silicon wafer substrate.
No temperature rise of the very thin Al film was observed
in the current range for which the resistance of the
very thin Al film disappeared.</abstract><doi>10.1143/JJAP.39.2750</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2000-05, Vol.39 (5R), p.2750 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_39_2750 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Disappearance of Ohmic Loss Corresponding to Disappearance of Resistance in Very Thin Al Film |
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