Disappearance of Ohmic Loss Corresponding to Disappearance of Resistance in Very Thin Al Film
A very thin Al film of 700 Å or 430 Å thickness was evaporated on an arachidic acid Langumuir-Blodgett film which was deposited on a SiO 2 film present on a silicon wafer substrate. No temperature rise of the very thin Al film was observed in the current range for which the resistance of the very th...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2000-05, Vol.39 (5R), p.2750 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A very thin Al film of 700 Å or 430 Å thickness was
evaporated on an arachidic acid Langumuir-Blodgett film which was
deposited on a SiO
2
film present on a silicon wafer substrate.
No temperature rise of the very thin Al film was observed
in the current range for which the resistance of the
very thin Al film disappeared. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.39.2750 |