Electrically Induced Optical Absorption in Al-CuAlS 2 -Au Diode

Electrically Induced Optical Absorption in Al-CuAlS 2 -Au Diode

Electrically induced change in absorption spectra was observed for the first time in the CuAlS 2 -Al junction with a Schottky-type contact at 20 K in the wavelength region 600–900 nm. The observed change of absorption is considered to be due to the motion of the Fermi level on applying voltage acros...

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Veröffentlicht in:Japanese Journal of Applied Physics 1999-06, Vol.38 (6A), p.L626
Hauptverfasser: Naohiro Ishibashi, Naohiro Ishibashi, Takao Nishi, Takao Nishi, Naoyuki Hayashi, Naoyuki Hayashi, Chihomi Furuhashi, Chihomi Furuhashi, Katsuaki Sato, Katsuaki Sato
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Sprache:eng
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Zusammenfassung:Electrically induced change in absorption spectra was observed for the first time in the CuAlS 2 -Al junction with a Schottky-type contact at 20 K in the wavelength region 600–900 nm. The observed change of absorption is considered to be due to the motion of the Fermi level on applying voltage across the level formed by some charged state at the metal-semiconductor interface.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.L626