Strain Modification of GaN in AlGaN/GaN Epitaxial Films

We investigated AlGaN/GaN heterostructures grown by metal-organic vapor-phase epitaxy on sapphire by calorimetric absorption, transmission and reflection spectroscopy (CAS/CTS/CRS) at 47 mK. The AlGaN film on a 2-µm-thick GaN layer introduces additional compressive strain into the GaN layer. A blue...

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Veröffentlicht in:Japanese Journal of Applied Physics 1999-05, Vol.38 (5A), p.L498
Hauptverfasser: Steude, Guido, Meyer, Bruno K., Göldner, Axel, Hoffmann, Axel, Kaschner, Axel, Bechstedt, Friedhelm, Amano, Hiroshi, Akasaki, Isamu
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Sprache:eng
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Zusammenfassung:We investigated AlGaN/GaN heterostructures grown by metal-organic vapor-phase epitaxy on sapphire by calorimetric absorption, transmission and reflection spectroscopy (CAS/CTS/CRS) at 47 mK. The AlGaN film on a 2-µm-thick GaN layer introduces additional compressive strain into the GaN layer. A blue shift of the A- and B-exciton line positions is directly proportional to the AlN molar fraction in the films. The amount of strain in the GaN layers is quantified by micro-Raman experiments. We can explain the results by taking into account the elastic properties of GaN and AlGaN.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.L498