Strain Modification of GaN in AlGaN/GaN Epitaxial Films
We investigated AlGaN/GaN heterostructures grown by metal-organic vapor-phase epitaxy on sapphire by calorimetric absorption, transmission and reflection spectroscopy (CAS/CTS/CRS) at 47 mK. The AlGaN film on a 2-µm-thick GaN layer introduces additional compressive strain into the GaN layer. A blue...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1999-05, Vol.38 (5A), p.L498 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We investigated AlGaN/GaN heterostructures grown by metal-organic vapor-phase
epitaxy on sapphire by calorimetric absorption, transmission and reflection spectroscopy
(CAS/CTS/CRS) at 47 mK. The AlGaN film on a 2-µm-thick GaN layer introduces additional
compressive strain into the GaN layer. A blue shift of the A- and B-exciton line positions is
directly proportional to the AlN molar fraction in the films. The amount of strain in the GaN
layers is quantified by micro-Raman experiments. We can explain the results by taking into
account the elastic properties of GaN and AlGaN. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.L498 |