Fluorinated Carbon Films with Low Dielectric Constant Made from Novel Fluorocarbon Source Materials by RF Plasma Enhanced Chemical Vapor Deposition
An attempt to fabricate fluorinated carbon (fluoropolymer) films by rf (13.56 MHz) plasma enhanced chemical vapor deposition was made using novel fluorocarbon source materials of C 7 F 16 , (C 3 F 7 ) 3 N/(C 4 F 9 ) 3 N and C 8 F 18 /C 8 F 16 O. The deposited films were transparent and displayed exc...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999, Vol.38 (12B), p.L1544 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | An attempt to fabricate fluorinated carbon (fluoropolymer) films
by rf (13.56 MHz) plasma enhanced chemical vapor deposition
was made using novel fluorocarbon source materials of
C
7
F
16
, (C
3
F
7
)
3
N/(C
4
F
9
)
3
N
and C
8
F
18
/C
8
F
16
O.
The deposited films were transparent and displayed
excellent electrical properties as interlayer dielectrics
for LSI using deep-submicron technology,
namely, a dielectric constant as low as 2.0
and a dielectric strength higher than 2 MV/cm.
The refractive index of these films was 1.38. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.38.L1544 |