Continuous Wave Operation of 1.55 µm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
The room temperature CW operation of a 1.55 µm wavelength GaInAsP/InP laser with a deeply etched third-order Bragg reflector consisting of a semiconductor/Benzocyclobutene periodic structure was obtained for the first time. A threshold current as low as 13.5 mA and differential quantum efficiency of...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-11, Vol.38 (11A), p.L1240 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The room temperature CW operation of a 1.55 µm wavelength
GaInAsP/InP laser with a deeply etched third-order Bragg reflector
consisting of a semiconductor/Benzocyclobutene periodic structure was
obtained for the first time. A threshold current as low as 13.5 mA
and differential quantum efficiency of 28% for a cavity length of 330
µm and a stripe width of 5 µm was obtained
with 10 elements of the Bragg reflector on one side. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.38.L1240 |