Growth of Low Etch Pit Density Homogeneous 2 ′′ InP Crystals Using a Newly Developed Thermal Baffle

Low Etch pit density 2 ′′ InP crystals were grown by the liquid-encapsulated Czochralski (LEC) method using a newly developed thermal baffle. The average EPD of Sn-doped InP crystals was reduced to less than 3000 cm -2 . The minimum average EPD was about 200 cm -2 . Visible facets were observed and...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1999-02, Vol.38 (2S), p.969, Article 969
1. Verfasser:	Hirano, Ryuichi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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