Growth of Low Etch Pit Density Homogeneous 2 ′′ InP Crystals Using a Newly Developed Thermal Baffle

Low Etch pit density 2 ′′ InP crystals were grown by the liquid-encapsulated Czochralski (LEC) method using a newly developed thermal baffle. The average EPD of Sn-doped InP crystals was reduced to less than 3000 cm -2 . The minimum average EPD was about 200 cm -2 . Visible facets were observed and the crystal was somewhat rectangular. No lineage-type defects were observed even in the last portion of the crystal. Dislocation-free (DF) (EPD≦500 cm -2 ) S-doped InP crystals were also obtained with lower S concentration using the newly developed baffle. The minimum S concentration for growing the DF crystal was 1.7×10 18 cm -3 .