Optimization of Sample Plan for Overlay and Alignment Accuracy Improvement
The overlay control requirement for a sub-0.15 µm design rule device is nominally less than 40 nm. To meet this demand, every factor known to affect the overlay budget should be analyzed in detail and corrected as much as possible. One of the major causes degrading the overlay budget is the nonoptim...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1999-12, Vol.38 (12S), p.7164 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The overlay control requirement for a sub-0.15 µm design
rule device is nominally less than 40 nm. To meet this demand,
every factor known to affect the overlay budget should be analyzed
in detail and corrected as much as possible. One of the major causes
degrading the overlay budget is the nonoptimized wafer sample
plan. Compensated but undercorrected overlay errors fitted as linear
terms can be amplified in case of using improper sample plan
(
e.g.
, an asymmetric plan). In this study, we investigated
the sample plan dependency of global alignment repeatability and
overlay measurement accuracy. The achievement of better alignment
repeatability is critical for improving not only in-wafer overlay
but wafer-to-wafer overlay control. Global alignment repeatability
and its results are significantly affected by which chips in a wafer
map are selected for global alignment use. Several sample plans
which are limited to the symmetric group (i.e., translation,
inversion, rotation and symmetric), are tested. The criteria for
selecting the optimum sample plan were the residuals and linear-term
reproducibility, both of which are significantly affected by raw
data noise. Raw data variations include stage positioning errors and
process-induced alignment signal abnormality. From among the
candidates, we determined an optimal sample plan which leaves the
least residuals and exhibits repeatability as good as that in full
chip measurement. Similar results could be obtained for an overlay
sample plan. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.7164 |