Development of Highly Accurate X-Ray Mask with High-Density Patterns

Highly accurate X-ray masks with high-density patterns have been newly developed. SiC film is used as a membrane and Ta film deposited by electron cyclotron resonance (ECR) sputtering method is used as an absorber. Ru film is deposited as an intermediate layer between the membrane and the absorber t...

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Veröffentlicht in:Japanese Journal of Applied Physics 1999-12, Vol.38 (12S), p.7071
Hauptverfasser: Shimada, Masaru, Tsuchizawa, Tai, Uchiyama, Shingo, Ohkubo, Takashi, Itabashi, Seiichi, Okada, Ikuo, Ono, Toshiro, Oda, Masatoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:Highly accurate X-ray masks with high-density patterns have been newly developed. SiC film is used as a membrane and Ta film deposited by electron cyclotron resonance (ECR) sputtering method is used as an absorber. Ru film is deposited as an intermediate layer between the membrane and the absorber to prevent the distortion caused by the fabrication of high-density patterns. A membrane process in which the absorber is patterned after back-etching and a distortion compensation method by electron beam (EB) writing are adopted to reduce pattern displacement. By combining these techniques, highly accurate X-ray masks with high-density patterns, which correspond to 4-Gbit-class dynamic random access memory (DRAM) pattern density, can be fabricated with distortions less than 40 nm.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.7071