Development of Highly Accurate X-Ray Mask with High-Density Patterns
Highly accurate X-ray masks with high-density patterns have been newly developed. SiC film is used as a membrane and Ta film deposited by electron cyclotron resonance (ECR) sputtering method is used as an absorber. Ru film is deposited as an intermediate layer between the membrane and the absorber t...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1999-12, Vol.38 (12S), p.7071 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Highly accurate X-ray masks with high-density patterns have been
newly developed. SiC film is used as a membrane and Ta film
deposited by electron cyclotron resonance (ECR) sputtering method is
used as an absorber. Ru film is deposited as an intermediate layer
between the membrane and the absorber to prevent the distortion
caused by the fabrication of high-density patterns. A membrane
process in which the absorber is patterned after back-etching and a
distortion compensation method by electron beam (EB) writing are
adopted to reduce pattern displacement. By combining these
techniques, highly accurate X-ray masks with high-density patterns,
which correspond to 4-Gbit-class dynamic random access memory (DRAM)
pattern density, can be fabricated with distortions less than 40 nm. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.7071 |