Near-Infrared Photoluminescence in Mo-Doped Single Crystals of CuAlS 2

Near-infrared photoluminescence (PL) spectra were measured at 6 K in single crystals of CuAlS 2 doped with different amounts of Mo. A fine-structure PL emission was observed around 1,600 nm (0.775 eV) in both lightly and heavily doped crystals. The emission was tentatively assigned to the ligand-fie...

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Veröffentlicht in:Japanese Journal of Applied Physics 1999-02, Vol.38 (2R), p.683
Hauptverfasser: Takao Nishi, Takao Nishi, Naohiro Ishibashi, Naohiro Ishibashi, Yuji Katsumata, Yuji Katsumata, Katsuaki Sato, Katsuaki Sato
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container_title Japanese Journal of Applied Physics
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creator Takao Nishi, Takao Nishi
Naohiro Ishibashi, Naohiro Ishibashi
Yuji Katsumata, Yuji Katsumata
Katsuaki Sato, Katsuaki Sato
description Near-infrared photoluminescence (PL) spectra were measured at 6 K in single crystals of CuAlS 2 doped with different amounts of Mo. A fine-structure PL emission was observed around 1,600 nm (0.775 eV) in both lightly and heavily doped crystals. The emission was tentatively assigned to the ligand-field transition in 4d 3 -manifold of Mo 3+ ions taking into account the reported PL spectrum in Nb 2+ (4d 3 )-doped GaAs. On the other hand, a broad emission band around 1,500 nm (0.826 eV) was only observed in heavily-doped crystals and was tentatively assigned to an intra-center transition of the Mo 2+ –X complex.
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title Near-Infrared Photoluminescence in Mo-Doped Single Crystals of CuAlS 2
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