Near-Infrared Photoluminescence in Mo-Doped Single Crystals of CuAlS 2
Near-infrared photoluminescence (PL) spectra were measured at 6 K in single crystals of CuAlS 2 doped with different amounts of Mo. A fine-structure PL emission was observed around 1,600 nm (0.775 eV) in both lightly and heavily doped crystals. The emission was tentatively assigned to the ligand-fie...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1999-02, Vol.38 (2R), p.683 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Near-infrared photoluminescence (PL) spectra were measured at 6 K in single crystals of CuAlS
2
doped with different amounts of Mo. A fine-structure PL emission was observed around 1,600 nm (0.775 eV) in both lightly and heavily doped crystals. The emission was tentatively assigned to the ligand-field transition in 4d
3
-manifold of Mo
3+
ions taking into account the reported PL spectrum in Nb
2+
(4d
3
)-doped GaAs. On the other hand, a broad emission band around 1,500 nm (0.826 eV) was only observed in heavily-doped crystals and was tentatively assigned to an intra-center transition of the Mo
2+
–X complex. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.683 |