Experimental Measurement of the Intensity Profiles of a Low-energy Electron Beam Extracted from a Scanning Tunneling Microscope Tip by Field Emission
The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1999, Vol.38 (10R), p.6172, Article 6172 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam were measured as a function of the e-beam exposure time, and it was found that the e-beam has a Gaussian-type lateral profile. The results show that the e-beam profile can be controlled by adjusting the parameters of the e-beam emission and that the sizes of the Si oxide opening windows can be adjusted by varying the e-beam exposure time. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.6172 |