Experimental Measurement of the Intensity Profiles of a Low-energy Electron Beam Extracted from a Scanning Tunneling Microscope Tip by Field Emission

The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam...

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Veröffentlicht in:Japanese Journal of Applied Physics 1999, Vol.38 (10R), p.6172, Article 6172
Hauptverfasser: Ippei Kawamoto, Ippei Kawamoto, Nan Li, Nan Li, Tatsuo Yoshinobu, Tatsuo Yoshinobu, Hiroshi Iwasaki, Hiroshi Iwasaki
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Sprache:eng
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Zusammenfassung:The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam were measured as a function of the e-beam exposure time, and it was found that the e-beam has a Gaussian-type lateral profile. The results show that the e-beam profile can be controlled by adjusting the parameters of the e-beam emission and that the sizes of the Si oxide opening windows can be adjusted by varying the e-beam exposure time.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.6172