Development of Lead Zirconate Titanate Family Thick Films on Various Substrates

We propose a POS (Piezo on Silicon) actuator, which comprise piezoelectric materials on a silicon substrate, and the actuation mechanism uses a bending vibration of a unimorph structure. Realization of this device was attempted, and the low-temperature sintering of piezoelectric ceramics, optimization of the screen-printing method and the barrier layer on a silicon substrate were developed. Regarding PMN–PZ–PT and PNN–PZ–PT bulk samples, a sintering temperature of 850°C became possible with the addition of Li–Bi oxide. Pt–Rh/TaN was used as a barrier layer, and a 30 µm-thick PNN–PZ–PT film prepared at 900°C on a Si substrate with a Pt–Rh/TaN buffer layer exhibited ε r = 2290, E c = 8.6 kV/cm and P r = 5.7 µC/cm 2 .