Effect of Excess Lead Addition on Processing of Sol-Gel Derived Lanthanum-Modified Lead Zirconate Titanate Thin Film
Sol-gel-derived lanthanum-modified lead zirconate titanate (PLZT) thin films with a La/Zr/Ti ratio of 10/65/35 and a lead lanthanum titanate (PLT) thin seeding layer were successfully deposited on an indium tin oxide (ITO)-coated soda lime glass substrate at 500°C. Effects of excess lead addition of...
Gespeichert in:
Veröffentlicht in: | Japanese Journal of Applied Physics 1999-09, Vol.38 (9S), p.5354 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Sol-gel-derived lanthanum-modified lead zirconate titanate (PLZT) thin films with a La/Zr/Ti
ratio of 10/65/35 and a lead lanthanum titanate (PLT) thin seeding layer were successfully
deposited on an indium tin oxide (ITO)-coated soda lime glass substrate at 500°C. Effects of
excess lead addition of different concentrations in the precursor solution on the electrical
properties of the resultant PLZT thin films were investigated. As a result, the relative
permittivity increased and the dissipation factor decreased with the increase of excess lead
concentration. Excess lead of 30 mol% was indispensable for obtaining PLZT thin film with
good ferroelectricity. In addition, the resultant films showed more than 60% transmittance in
the visible region. |
---|---|
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.5354 |