Low-Temperature Crystallization of Sol-Gel-Derived Pb(Zr, Ti)O 3 Thin Films
Sol-gel derived Pb(Zr,Ti)O 3 capacitors were prepared by low-pressure annealing and the two-step annealing techniques. Well-saturated D – E hysteresis was obtained at 650°C with low-pressure rapid thermal annealing. The low-pressure first anneal lowered the crystallization temperature of sol-gel-der...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1999-09, Vol.38 (9S), p.5346 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Sol-gel derived Pb(Zr,Ti)O
3
capacitors were prepared
by low-pressure annealing and the two-step annealing techniques.
Well-saturated
D
–
E
hysteresis was obtained at 650°C
with low-pressure rapid thermal annealing.
The low-pressure first anneal lowered the crystallization temperature
of sol-gel-derived Pb(Zr,Ti)O
3
thin films.
Highly reliable and low-voltage operation Pb(Zr,Ti)O
3
capacitors were
obtained using a two-step annealing techniques under low-pressure at 550°C. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.38.5346 |