Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

Coulomb blockade effects are studied in highly doped molecular-beam-epitaxy grown silicon quantum wires. The nanometer structure of the single electron tunneling transistor (SETT) is fabricated by electron beam lithography (EBL), anisotropic reactive ion etching (RIE) and low temperature oxide depos...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 1999-01, Vol.38 (1S), p.465
Hauptverfasser:	Koester, Thomas, Goldschmidtboeing, Frank, Hadam, Birgit, Stein, Josef, Altmeyer, Stefan, Spangenberg, Bernd, Kurz, Heinrich, Neumann, Robert, Brunner, Karl, Abstreiter, Gerd
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!