Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System

The high-resolution and high-aspect-ratio resist-patterning method using a trilayer-resist system with atomic force microscopy (AFM) lithography is described. This system consists of a high-resolution negative-type resist as a top layer, p-Si as an intermediate layer, and an organic resist as a bott...

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Veröffentlicht in:Japanese Journal of Applied Physics 1999-04, Vol.38 (4S), p.2445
Hauptverfasser: Ishibashi, Masayoshi, Sugita, Nami, Heike, Seiji, Kajiyama, Hiroshi, Hashizume, Tomihiro
Format: Artikel
Sprache:eng
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Zusammenfassung:The high-resolution and high-aspect-ratio resist-patterning method using a trilayer-resist system with atomic force microscopy (AFM) lithography is described. This system consists of a high-resolution negative-type resist as a top layer, p-Si as an intermediate layer, and an organic resist as a bottom layer. Since the bottom layer planarizes the surface, the patterns can be fabricated on a stepped surface. Using this method, we successfully fabricate 50-nm-wide and 340-nm-thick line-and-space resist patterns on a 200-nm-stepped substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.2445