Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System
The high-resolution and high-aspect-ratio resist-patterning method using a trilayer-resist system with atomic force microscopy (AFM) lithography is described. This system consists of a high-resolution negative-type resist as a top layer, p-Si as an intermediate layer, and an organic resist as a bott...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1999-04, Vol.38 (4S), p.2445 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The high-resolution and high-aspect-ratio resist-patterning method using a trilayer-resist
system with atomic force microscopy (AFM) lithography is described. This system consists of a
high-resolution negative-type resist as a top layer, p-Si as an intermediate layer, and an organic
resist as a bottom layer. Since the bottom layer planarizes the surface, the patterns can be
fabricated on a stepped surface. Using this method, we successfully fabricate 50-nm-wide and 340-nm-thick line-and-space resist patterns on a 200-nm-stepped substrate. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.2445 |