Investigation of Arsenic Desorption from GaAs(111)B Surface in Atmospheric Pressure Atomic Layer Epitaxy

Arsenic desorption from the GaAs (111)B surface is investigated under atmospheric pressure using an in situ gravimetric monitoring system, which is equipped with a halogen transport atomic layer epitaxy (ALE) reactor and a microbalance system. It is shown that the growth rate decreases from > 1.0 to 0.5 molecular layer (ML)/cycle with increasing H 2 purge time after AsH 3 supply depending on the As coverage on the surface, and (111)B GaAs has three kinds of reconstructed surfaces in the atmospheric ALE. The atomic force microscopy (AFM) images of 100 ML grown surfaces show that atomically smooth surfaces can be obtained on the reconstructions of (1×1) LT and (√19×√19).