Development Process for Chemically Amplified Resist by KrF Imaging

The development process for chemically amplified resist by KrF imaging was investigated. The effects of developer concentration, development time and surfactant on process latitude were examined. In order to extend the process latitude, the development condition with faster dissolution rate at the center of the exposed area and slower dissolution rate at the edge of the exposed area was found to be promising. It was also found that the addition of a surfactant to the developer extended the process latitude. The developer with the surfactant tends to suppress the slimmed resist linewidth in the overexposed area and to enhance resist dissolution in the underexposed area.