Effect of Sn Doping on the Crystal Growth of Indium Oxide Films

Heteroepitaxial growth of tin-doped indium oxide (ITO) and non-doped indium oxide (IO) thin films was carried out on single-crystal yttria-stabilized zirconia substrates by molecular beam epitaxy. The surface morphology of these epitaxial films was characterized by scanning electron microscopy. The...

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Veröffentlicht in:Japanese Journal of Applied Physics 1998-12, Vol.37 (12R), p.6585
Hauptverfasser: Taga, Naoaki, Maekawa, Mikako, Kamei, Masayuki, Yasui, Itaru, Shigesato, Yuzo
Format: Artikel
Sprache:eng
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Zusammenfassung:Heteroepitaxial growth of tin-doped indium oxide (ITO) and non-doped indium oxide (IO) thin films was carried out on single-crystal yttria-stabilized zirconia substrates by molecular beam epitaxy. The surface morphology of these epitaxial films was characterized by scanning electron microscopy. The doped ITO and non doped IO epitaxial films showed drastic changes in surface morphology, which suggested that Sn acted not only as a dopant but also as a growth modifier for IO films. The surface morphology analysis of IO and ITO films revealed a growth rate enhancement by Sn doping along the direction.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.6585