Physical Properties of Heavily B-doped Microcrystalline Si–Ge Alloys and Schottky Barrier of B–Si–Ge/P-Si

The heavily B-doped microcrystalline Si–Ge alloy was prepared for the density of B atoms of the order of 1 at.%. The hopping conduction due to localized states near the valence band edge is observed. The presence of localized states increases the disorder effect due to B - atoms. The heavily B-doped µc Si–Ge has the enhanced optical absorption at lower photon energy side than the band-gap energy of poly SiGe. This was explained semi quantitatively by this disorder effect. A microcrystalline B–Si–Ge/P-Si Schottky barrier was fabricated. The dependence of the barrier potential on Si composition agrees with the Cowely-Sze theory, which can be applied to a metal-Si Schottky barrier with a native oxide.