Effect of Strong Borrmann Absorption on X-Ray Fluorescence Yield Curves

The Ga K X-ray fluorescence yield from GaAs was measured around the 200 reflection peak in the symmetric Laue case, by tuning the incident X-ray energy from a synchrotron radiation source between the K-absorption edges of Ga and As. It was found that the fluorescence yields from the crystal surface...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998, Vol.37 (7R), p.4014
Hauptverfasser:	Riichirou Negishi, Riichirou Negishi, Tomoe Fukamachi, Tomoe Fukamachi, Zhangcheng Xu, Zhangcheng Xu, Masami Yoshizawa, Masami Yoshizawa, Isao Matsumoto, Isao Matsumoto, Takaaki Kawamura, Takaaki Kawamura, Tetsuo Nakajima, Tetsuo Nakajima
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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