Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation

Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation

By combining the effects of chemical dry etching (CDE) and sacrificial oxidation, a smooth trench sidewall surface with a root-mean-square (Rms) roughness of less than 1 nm was obtained. The possibility of obtaining a smooth surface such as that of a planar metal-oxide-semiconductor (MOS) by increas...

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Veröffentlicht in:Japanese Journal of Applied Physics 1998, Vol.37 (7R), p.3954
Hauptverfasser: Yahata, Akihiro, Urano, Satoshi, Inoue, Tomoki, Shinohe, Takashi
Format: Artikel
Sprache:eng
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Zusammenfassung:By combining the effects of chemical dry etching (CDE) and sacrificial oxidation, a smooth trench sidewall surface with a root-mean-square (Rms) roughness of less than 1 nm was obtained. The possibility of obtaining a smooth surface such as that of a planar metal-oxide-semiconductor (MOS) by increasing both the CDE etching time and the oxide thickness of sacrificial oxidation appears likely.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.3954