Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma
Fractional electron density, which is partial electron density in energy distribution, has been measured in a high-density non-magnetic ultrahigh-frequency (UHF) plasma from optical emission of rare gases (Xe, Ar, He). The technique was applied to rare gas mixed plasma, as well as fluorocarbon gas c...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1998-04, Vol.37 (4S), p.2400 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Fractional electron density, which is partial electron density in energy distribution, has been
measured in a high-density non-magnetic ultrahigh-frequency (UHF) plasma from optical emission
of rare gases (Xe, Ar, He). The technique was applied to rare gas mixed plasma, as well as
fluorocarbon gas containing plasma. In the calculation procedure, the fractional electron density was
assumed to be constant between the two threshold energies of the different emissions. In the
experiment, total electron density was changed by changing the UHF source power without changing
electron temperature measured by a single probe. However, in UHF plasma, the fractional electron
density between the threshold energy of ArI and HeI emissions increased more than total electron
density increase. This result was obtained both for Ar/He plasma and Ar/C
4
F
8
/He/Xe plasma. On the
other hand, fractional electron density over the threshold energy of He increased at about the same
rate of or less than the total electron density increase. In addition, the fractional electron density
between the threshold energy of XeI and ArI in Ar/C
4
F
8
/He/Xe plasma increased less than total
electron density increase. These results indicate that the electron temperature, which is commonly
used as a typical index value of electron energy of the plasma, does not reflect the fine structure of
EEDF. The optical technique can supplement this point, especially at the high energy tail of EEDF. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.37.2400 |