Fabrication Procedures and Characteristics of 6H-SiC Au-gate Metal-Semiconductor Field-Effect Transistor for Use at High Temperatures

A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIE) for device isolation and ion implantation for the n + contact regions of the source and drain. The device exhibited a pinch-off voltage of -9 V, transconductance ( g m ) of 5.3 mS/mm, a...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998, Vol.37 (4R), p.1817
Hauptverfasser:	Toda, Tadao, Ueda, Yasuhiro, Ibaraki, Akira
Format:	Artikel
Sprache:	eng
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description	A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIE) for device isolation and ion implantation for the n + contact regions of the source and drain. The device exhibited a pinch-off voltage of -9 V, transconductance ( g m ) of 5.3 mS/mm, and gate breakdown voltage of -200 V. The characteristics of the MESFET were investigated at high temperatures. This MESFET can be operated at 400°C.
doi_str_mv	10.1143/JJAP.37.1817
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title	Fabrication Procedures and Characteristics of 6H-SiC Au-gate Metal-Semiconductor Field-Effect Transistor for Use at High Temperatures
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