Fabrication Procedures and Characteristics of 6H-SiC Au-gate Metal-Semiconductor Field-Effect Transistor for Use at High Temperatures

A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIE) for device isolation and ion implantation for the n + contact regions of the source and drain. The device exhibited a pinch-off voltage of -9 V, transconductance ( g m ) of 5.3 mS/mm, and gate breakdown voltage of -200 V. The characteristics of the MESFET were investigated at high temperatures. This MESFET can be operated at 400°C.