Fabrication Technology of Ferroelectric Memories

Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1998-03, Vol.37 (3S), p.1325
Hauptverfasser:	Takashi Nakamura, Takashi Nakamura, Yoshikazu Fujimori, Yoshikazu Fujimori, Naoki Izumi, Naoki Izumi, Akira Kamisawa, Akira Kamisawa
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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