Fabrication Technology of Ferroelectric Memories

Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C...

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Veröffentlicht in:Japanese Journal of Applied Physics 1998-03, Vol.37 (3S), p.1325
Hauptverfasser: Takashi Nakamura, Takashi Nakamura, Yoshikazu Fujimori, Yoshikazu Fujimori, Naoki Izumi, Naoki Izumi, Akira Kamisawa, Akira Kamisawa
Format: Artikel
Sprache:eng
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Zusammenfassung:Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C ferroelectric memory and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FET with stable properties. MFMIS FET is one type of FET ferroelectric memory which we proposed. To obtain good ferroelectric capacitors on poly-Si, we used Ir based materials as electrodes of the capacitors. By using Ir based electrodes, the characteristics of Pb(Zi,Ti)O 3 (PZT) capacitors on poly-Si were equivalent to those on SiO 2 . Moreover, the PZT capacitors with Ir based electrodes showed dramatic improvement in fatigue and imprint properties.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.1325