Fabrication Technology of Ferroelectric Memories
Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1998-03, Vol.37 (3S), p.1325 |
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| container_issue | 3S |
| container_start_page | 1325 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 37 |
| creator | Takashi Nakamura, Takashi Nakamura Yoshikazu Fujimori, Yoshikazu Fujimori Naoki Izumi, Naoki Izumi Akira Kamisawa, Akira Kamisawa |
| description | Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C ferroelectric memory and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FET with stable properties. MFMIS FET is one type of FET ferroelectric memory which we proposed. To obtain good ferroelectric capacitors on poly-Si, we used Ir based materials as electrodes of the capacitors. By using Ir based electrodes, the characteristics of Pb(Zi,Ti)O
3
(PZT) capacitors on poly-Si were equivalent to those on SiO
2
. Moreover, the PZT capacitors with Ir based electrodes showed dramatic improvement in fatigue and imprint properties. |
| doi_str_mv | 10.1143/JJAP.37.1325 |
| format | Article |
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3
(PZT) capacitors on poly-Si were equivalent to those on SiO
2
. Moreover, the PZT capacitors with Ir based electrodes showed dramatic improvement in fatigue and imprint properties.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.37.1325</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1325</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-a3abed354147938aad1045df58112e7e2728e84a8bb67bfd0f00c441ff979a403</citedby><cites>FETCH-LOGICAL-c381t-a3abed354147938aad1045df58112e7e2728e84a8bb67bfd0f00c441ff979a403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Takashi Nakamura, Takashi Nakamura</creatorcontrib><creatorcontrib>Yoshikazu Fujimori, Yoshikazu Fujimori</creatorcontrib><creatorcontrib>Naoki Izumi, Naoki Izumi</creatorcontrib><creatorcontrib>Akira Kamisawa, Akira Kamisawa</creatorcontrib><title>Fabrication Technology of Ferroelectric Memories</title><title>Japanese Journal of Applied Physics</title><description>Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C ferroelectric memory and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FET with stable properties. MFMIS FET is one type of FET ferroelectric memory which we proposed. To obtain good ferroelectric capacitors on poly-Si, we used Ir based materials as electrodes of the capacitors. By using Ir based electrodes, the characteristics of Pb(Zi,Ti)O
3
(PZT) capacitors on poly-Si were equivalent to those on SiO
2
. Moreover, the PZT capacitors with Ir based electrodes showed dramatic improvement in fatigue and imprint properties.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNotj8FOwzAQRC0EEqFw4wPyASTs2k7sHKuKUKoiOJSz5ThrCEprZOfSvycRnEYjjd7oMXaPUCJK8bjbrd9LoUoUvLpgGQqpCgl1dckyAI6FbDi_Zjcpfc-1riRmDFrbxcHZaQin_EDu6xTG8HnOg89bijHQSG6aB_krHUMcKN2yK2_HRHf_uWIf7dNhsy32b88vm_W-cELjVFhhO-rF_CFVI7S1PYKsel9pRE6KuOKatLS662rV-R48gJMSvW9UYyWIFXv447oYUorkzU8cjjaeDYJZbM1ia4Qyi634BXWsRyM</recordid><startdate>19980301</startdate><enddate>19980301</enddate><creator>Takashi Nakamura, Takashi Nakamura</creator><creator>Yoshikazu Fujimori, Yoshikazu Fujimori</creator><creator>Naoki Izumi, Naoki Izumi</creator><creator>Akira Kamisawa, Akira Kamisawa</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980301</creationdate><title>Fabrication Technology of Ferroelectric Memories</title><author>Takashi Nakamura, Takashi Nakamura ; Yoshikazu Fujimori, Yoshikazu Fujimori ; Naoki Izumi, Naoki Izumi ; Akira Kamisawa, Akira Kamisawa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-a3abed354147938aad1045df58112e7e2728e84a8bb67bfd0f00c441ff979a403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takashi Nakamura, Takashi Nakamura</creatorcontrib><creatorcontrib>Yoshikazu Fujimori, Yoshikazu Fujimori</creatorcontrib><creatorcontrib>Naoki Izumi, Naoki Izumi</creatorcontrib><creatorcontrib>Akira Kamisawa, Akira Kamisawa</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takashi Nakamura, Takashi Nakamura</au><au>Yoshikazu Fujimori, Yoshikazu Fujimori</au><au>Naoki Izumi, Naoki Izumi</au><au>Akira Kamisawa, Akira Kamisawa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication Technology of Ferroelectric Memories</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1998-03-01</date><risdate>1998</risdate><volume>37</volume><issue>3S</issue><spage>1325</spage><pages>1325-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Two types of ferroelectric memories have been proposed. One is a 1 transistor and 1 capacitor (1T1C) type and another is an FET (field effect transistor) type. The fabrication technique for fabrication ferroelectric capacitors on polycrystalline Si (poly-Si) was very effective for high density 1T1C ferroelectric memory and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FET with stable properties. MFMIS FET is one type of FET ferroelectric memory which we proposed. To obtain good ferroelectric capacitors on poly-Si, we used Ir based materials as electrodes of the capacitors. By using Ir based electrodes, the characteristics of Pb(Zi,Ti)O
3
(PZT) capacitors on poly-Si were equivalent to those on SiO
2
. Moreover, the PZT capacitors with Ir based electrodes showed dramatic improvement in fatigue and imprint properties.</abstract><doi>10.1143/JJAP.37.1325</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1325 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | Institute of Physics Journals |
| title | Fabrication Technology of Ferroelectric Memories |
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