The Analysis of the Defective Cells Induced by COP in a 0.3-micron-technology Node DRAM

The influence of a crystal originated pit (COP) on the deep sub-micron dynamic-random-access-memory (DRAM), was clarified by the investigation of the defective memory cells using 0.3 microns process test-element-group (TEG) which can operate as an actual DRAM. COP constrains the growth of field oxide film and leads to degradation of the isolation characteristics between the adjacent memory cells.