High Efficiency Electron-Emission in Pt/SiO x /Si/Al Structure

A high efficiency electro-emission device (HEED) has been developed with a structure of Pt/SiO x /Si/Al on a thermally-oxidized Si substrate. The thicknesses of the SiO x and Si films were 400 nm and 5 µ m, respectively. Electron emission characteristics of the HEED are reported. It was found that t...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1997-07, Vol.36 (7B), p.L939
Hauptverfasser:	Negishi, Nobuyasu, Chuman, Takashi, Iwasaki, Shingo, Yoshikawa, Takamasa, Hiroshi Ito, Hiroshi Ito, Kiyohide Ogasawara, Kiyohide Ogasawara
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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