High Efficiency Electron-Emission in Pt/SiO x /Si/Al Structure
A high efficiency electro-emission device (HEED) has been developed with a structure of Pt/SiO x /Si/Al on a thermally-oxidized Si substrate. The thicknesses of the SiO x and Si films were 400 nm and 5 µ m, respectively. Electron emission characteristics of the HEED are reported. It was found that t...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1997-07, Vol.36 (7B), p.L939 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A high efficiency electro-emission device (HEED) has been developed with a structure of Pt/SiO
x
/Si/Al on a thermally-oxidized Si substrate. The thicknesses of the SiO
x
and Si films were 400 nm and 5 µ m, respectively. Electron emission characteristics of the HEED are reported. It was found that the HEED has an electron-emission efficiency as high as 28% and a high brightness of 80 kcd/m
2
using phosphor ZnS:Cu,Al. This high electron-emission efficiency was obtained in a range of applied voltage in which negative resistance occurred. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.36.L939 |