Thermodynamic analysis on Molecular Beam Epitaxy of GaN, InN and AlN

Thermodynamic analysis on Molecular Beam Epitaxy of GaN, InN and AlN

A chemical equilibrium model is applied to the Molecular Beam Epitaxy (MBE) growth of GaN, InN and AlN semiconductors using atomic nitrogen and NH 3 sources. The equilibrium partial pressure and the growth rate are calculated for each of the following parameters: input V/III ratio, input partial pre...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997-06, Vol.36 (6B), p.L750-L753
Hauptverfasser: KOUKITU, A, SEKI, H
Format: Artikel
Sprache:eng
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Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
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container_title Japanese Journal of Applied Physics
container_volume 36
creator KOUKITU, A
SEKI, H
description A chemical equilibrium model is applied to the Molecular Beam Epitaxy (MBE) growth of GaN, InN and AlN semiconductors using atomic nitrogen and NH 3 sources. The equilibrium partial pressure and the growth rate are calculated for each of the following parameters: input V/III ratio, input partial pressure of group III elements and growth temperature. A phase diagram for the deposition, indicating etching, droplet and growth regions, is computed for the growth of III–V nitrides. Based on the diagram, the growth condition suitable for the MBE growth of III–V nitrides is predicted.
doi_str_mv 10.1143/jjap.36.L750
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
title Thermodynamic analysis on Molecular Beam Epitaxy of GaN, InN and AlN
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