Thermodynamic analysis on Molecular Beam Epitaxy of GaN, InN and AlN

A chemical equilibrium model is applied to the Molecular Beam Epitaxy (MBE) growth of GaN, InN and AlN semiconductors using atomic nitrogen and NH 3 sources. The equilibrium partial pressure and the growth rate are calculated for each of the following parameters: input V/III ratio, input partial pressure of group III elements and growth temperature. A phase diagram for the deposition, indicating etching, droplet and growth regions, is computed for the growth of III–V nitrides. Based on the diagram, the growth condition suitable for the MBE growth of III–V nitrides is predicted.