Metalorganic vapor Phase Epitaxy of Sb-doped ZnSe

The Sb-doped ZnSe was grown on (100)GaAs substrate by using the Metalorganic Vapor Phase Epitaxy method in atmospheric pressure in order to obtain a p-type ZnSe film. The C-V measurement of the Sb-doped ZnSe layer suggests a p-type conduction. The maximum space charge concentration obtained was 1.5×...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1997-05, Vol.36 (5A), p.L540-L542
Hauptverfasser:	TAKEMURA, M, GOTO, H, IDO, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Electronic transport in condensed matter Exact sciences and technology Iii-v and ii-vi semiconductors Physics
Online-Zugang:	Volltext
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