Metalorganic vapor Phase Epitaxy of Sb-doped ZnSe

Metalorganic vapor Phase Epitaxy of Sb-doped ZnSe

The Sb-doped ZnSe was grown on (100)GaAs substrate by using the Metalorganic Vapor Phase Epitaxy method in atmospheric pressure in order to obtain a p-type ZnSe film. The C-V measurement of the Sb-doped ZnSe layer suggests a p-type conduction. The maximum space charge concentration obtained was 1.5×...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997-05, Vol.36 (5A), p.L540-L542
Hauptverfasser: TAKEMURA, M, GOTO, H, IDO, T
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Electronic transport in condensed matter
Exact sciences and technology
Iii-v and ii-vi semiconductors
Physics
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Zusammenfassung:The Sb-doped ZnSe was grown on (100)GaAs substrate by using the Metalorganic Vapor Phase Epitaxy method in atmospheric pressure in order to obtain a p-type ZnSe film. The C-V measurement of the Sb-doped ZnSe layer suggests a p-type conduction. The maximum space charge concentration obtained was 1.5×10 16 cm -3 . The acceptor level of Sb, which was estimated from the photoluminescence spectrum, was found to be 69 meV.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.l540