Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface
Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form ato...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1997-03, Vol.36 (3B), p.L361 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.36.L361 |