Formation of metal-insulator-semiconductor structure (B/hexagonal BN/graphite) by plasma chemical vapor deposition

A new technique for fabrication of a metal-insulator-semi-conductor (MIS) structure (B/hexagonal BN/graphite) on graphite is presented. Hexagonal BN(h-BN) and B films were deposited by plasma chemical vapor deposition (CVD). The B films were n-type semiconductors. Raman measurement of the B film showed that the B-configuration of these films is similar to the one in tetragonal B crystal. The capacitance-voltage (C-V) characteristics of the MIS structure at 100 kHz with a 47 nm thick h-BN layer showed inversion behavior. This behavior seems to be due to the small energy gap (0.6 eV) of B films.