Thermal environment prediction for silicon crystal growth of up to 16-inch diameters in Czochralski furnaces

The thermal environment in Czochralski furnaces for silicon crystals having a diameter of 6 ′′ , 8 ′′ , 12 ′′ , and 16 ′′ is predicted through numerical simulation. To correct for the absence of melt convection factors in the simulation code, the thermal conductivity is increased for part of the molten silicon based on melt flow analysis. During the dipping process, the temperature of the quartz crucible is higher than that of the body process, and increases for larger hot zone size. This study shows that crucible temperatures during the dipping process is almost the same for 8 ′′ and 16 ′′ crystals, depending on magnetic field conditions.