Fabrication of 0.1 µm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography

We demonstrate applications of alternating phase shift mask (Alt-PSM) techniques to ArF excimer laser lithography with a numerical aperture of 0.6 and a coherence factor of 0.3. A 0.10 µm line-&-space (L/S) pattern was fabricated using a single-layer resist and a 0.09 µm L/S pattern was fabricat...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997-12, Vol.36 (12S), p.7488
Hauptverfasser: Keisuke Nakazawa, Keisuke Nakazawa, Masaya Uematsu, Masaya Uematsu, Toshio Onodera, Toshio Onodera, Kazuya Kamon, Kazuya Kamon, Tohru Ogawa, Tohru Ogawa, Shigeyasu Mori, Shigeyasu Mori, Makoto Takahashi, Makoto Takahashi, Takeshi Ohfuji, Takeshi Ohfuji, Hiroshi Ohtsuka, Hiroshi Ohtsuka, Masaru Sasago, Masaru Sasago
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Sprache:eng
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Zusammenfassung:We demonstrate applications of alternating phase shift mask (Alt-PSM) techniques to ArF excimer laser lithography with a numerical aperture of 0.6 and a coherence factor of 0.3. A 0.10 µm line-&-space (L/S) pattern was fabricated using a single-layer resist and a 0.09 µm L/S pattern was fabricated using a silylation resist. However, the process window was smaller for the silylation resist than for the single-layer resist over the 0.10–0.13 µm L/S range. The maximum depth of focus (DOF) values were approximately 0.3, 0.5, and 0.9 µm for 0.10, 0.11, and 0.13 µm L/S patterns, respectively, for the single-layer resist. From exposure dose-DOF-tree analysis, we estimated the inclusive process margin including the critical dimension difference, the DOF, the dose margin, and the phase error. Assuming that the usable DOF is larger than 0.5 and 0.6 µm for 0.11 and 0.13 µm L/S patterns, respectively, the inclusive process margin for the single-layer resist is poor in comparison with future predictions.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.7488