Synthesis of Ti(DPM) 2 (OCH 3 ) 2 and Evaluation of the TiO 2 Films Prepared by Metal-Organic Chemical Vapor Deposition

Highly pure Ti(DPM) 2 (OCH 3 ) 2 was synthesized by an exchange reaction of Ti(DPM) 2 (i-OC 3 H 7 ) 2 with CH 3 OH. The Ti(DPM) 2 (OCH 3 ) 2 is a white crystalline material with a melting point of 80.1° C, having a high vapor pressure the source temperature of 90° C, which enable its stable supply for a long time. At the film deposition temperatures of PZT and BST (500° C–650° C), no gas phase nucleation reaction was observed. The order of the performance of the step coverage for several titanium source materials was Ti(DPM) 2 (OCH 3 ) 2 >Ti(DPM) 2 (i-OC 3 H 7 ) 2 >Ti(DPM) 2 Cl 2 >Ti(i-OC 3 H 7 ) 4 . In the case of Ti(DPM) 2 (OCH 3 ) 2 , the step coverage for the Si substrate with an aspect ratio of 1.0 was 80% under the TiO 2 film deposition conditions of 650° C and 1 Torr.