High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots

We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray diffraction reciprocal space mapping and reflectivity. An anisotropy in the dot spacing was found, which proves an ordering of the islands in a disordered two-dimensional square lattice with main axes...

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Veröffentlicht in:Japanese Journal of Applied Physics 1997-06, Vol.36 (6B), p.4084-4087
Hauptverfasser: DARHUBER, A. A, HOLY, V, WERNER, P, STANGL, J, BAUER, G, KROST, A, GRUNDMANN, M, BIMBERG, D, USTINOV, V. M, KOP'EV, P. S, KOSOGOV, A. O
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Sprache:eng
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Zusammenfassung:We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray diffraction reciprocal space mapping and reflectivity. An anisotropy in the dot spacing was found, which proves an ordering of the islands in a disordered two-dimensional square lattice with main axes parallel to the direction and a lateral lattice parameter of 55 nm. Vertical correlations in the dot multilayers were investigated nondestructively in the regime of total external reflection of X-rays.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.4084