Structures on Si(100) 2 × 1 at the Initial Stages of Homoepitaxy by SiH 4 Decomposition

The initial stages of homoepitaxial island formation on Si(100)2×1 by SiH 4 decomposition under ultra high vacuum chemical vapor deposition conditions are studied by scanning tunneling microscopy and kinetic model calculations. The concentrations of the intermediate species formed on the surface during SiH 4 decomposition are calculated from the kinetic parameters of the dissociation cascade leading to Si film growth in the temperature regime of 500 to 800 K and for SiH 4 pressures in the range of 2×10 -7 to 2×10 -5 mbar. Experimental results showing the surface topography after interaction with SiH 4 at various surface temperatures and deposition rates are presented, and the observed surface structures are related to the different surface conditions, i.e., deposition flux and sample temperature, under which islands are formed.