Annealing properties of defects in B+- and F+-implanted Si studied using monoenergetic positron beams

Annealing properties of defects in F + - and B + -implanted Si were studied using monoenergetic positron beams. For F + -implanted specimen with a dose of 2×10 13 F/cm 2 , before annealing treatment, the mean size of the open volume of defects was estimated to be close to the size of divacancies. After rapid thermal annealing (RTA) at 700° C, vacancy-fluorine complexes and vacancy clusters were formed. The mean size of the open volume for the vacancy-fluorine complexes was estimated to be close to the size of monovacancies, and their annealing temperature was determined to be 800° C. For F + -implanted specimen with a dose of 4×10 15 F/cm 2 , complexes between vacancy clusters and fluorine atoms were introduced during solid-phase epitaxial growth of the amorphous region, and they were observed even after RTA at 1100° C. Effects of additional B + implantation on annealing properties of defects are also discussed.